CSD87503Q3ET

new-10%

Manufacturer part number:CSD87503Q3ET

Manufacturer:Texas Instruments

Description:30-V DUAL N-CHANNEL MOSFET, COMM

Case Package:SOT-23

Datasheet:CSD87503Q3ET Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Lifecycle Status	ACTIVE (Last Updated: 4 days ago)
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Surface Mount	YES
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Series	NexFET™
JESD-609 Code	e4
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Terminal Finish	Nickel/Palladium/Gold (Ni/Pd/Au)
Terminal Form	NO LEAD
Peak Reflow Temperature (Cel)	260
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Base Part Number	CSD87503
Number of Elements	2
Configuration	COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Power - Max	15.6W
FET Type	2 N-Channel (Dual) Common Source
Transistor Application	SWITCHING
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1020pF @ 15V
Current - Continuous Drain (Id) @ 25°C	10A Ta
Gate Charge (Qg) (Max) @ Vgs	17.4nC @ 4.5V
Drain to Source Voltage (Vdss)	30V
Drain Current-Max (Abs) (ID)	10A
DS Breakdown Voltage-Min	30V
FET Technology	METAL-OXIDE SEMICONDUCTOR
FET Feature	Standard
Drain to Source Resistance	13.5mOhm
Feedback Cap-Max (Crss)	194 pF
Length	3.3mm
Width	3.3mm
Thickness	1mm
RoHS Status	ROHS3 Compliant