TPS1101DG4 Overview

Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 2.3A amps.In this device, the drain-source breakdown voltage is 15V and VGS=15V, so the drain-source breakdown voltage is 15V in this case.It is [19 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.Single MOSFETs transistor is the resistance between the drain and source of a MOSFET when the gate-to-source voltage (VGS) is applied to bias the device to the on state, and Single MOSFETs transistor is 90mOhm.A turn-on delay time of 6.5 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 2V.To operate this transistor, you will need a -15V drain to source voltage (Vdss).

TPS1101DG4 Features

a continuous drain current (ID) of 2.3A
a drain-to-source breakdown voltage of 15V voltage
the turn-off delay time is 19 ns
single MOSFETs transistor is 90mOhm
a -15V drain to source voltage (Vdss)

TPS1101DG4 Applications

There are a lot of Texas Instruments
TPS1101DG4 applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies