3SK293

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Manufacturer part number:3SK293

Manufacturer:Toshiba

Description:3SK293 datasheet pdf and Transistors - FETs, MOSFETs - RF product details from Toshiba stock available on our website

Case Package:SOT-23

Datasheet:3SK293 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Surface Mount	YES
Material	Si
Number of Terminals	4
Transistor Element Material	SILICON
ECCN (US)	EAR99
Channel Mode	Enhancement
Number of Elements per Chip	1
Maximum Drain Source Voltage (V)	12.5
Maximum Gate Source Voltage (V)	±8
Maximum Continuous Drain Current (A)	0.03
Typical Input Capacitance @ Vds (pF)	2@6V
Maximum Power Dissipation (mW)	100
Typical Power Gain (dB)	22.5
Minimum Operating Temperature (°C)	-55
Maximum Operating Temperature (°C)	125
Supplier Package	USQ
Military	No
Mounting	Surface Mount
Package Height	0.95
Package Length	2
Package Width	1.25
PCB changed	4
Package Shape	RECTANGULAR
Manufacturer	Toshiba America Electronic Components
Packaging	Tape and Reel
Pbfree Code	No
Part Status	Active
ECCN Code	EAR99
Additional Feature	LOW NOISE
HTS Code	8541.21.00.75
Subcategory	FET General Purpose Power
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	unknown
Pin Count	4
JESD-30 Code	R-PDSO-G4
Qualification Status	Not Qualified
Number of Elements	1
Configuration	Single Dual Gate
Operating Mode	DUAL GATE, DEPLETION MODE
Transistor Application	AMPLIFIER
Polarity/Channel Type	N-CHANNEL
Drain Current-Max (Abs) (ID)	0.03 A
DS Breakdown Voltage-Min	12.5 V
Channel Type	N
FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	0.04 pF
Highest Frequency Band	ULTRA HIGH FREQUENCY BAND
Power Gain-Min (Gp)	20 dB
RoHS Status	RoHS Compliant