2SA2056(TE85L,F) Overview

As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 200 @ 300mA 2V.A VCE saturation (Max) of 200mV @ 33mA, 1A means Ic has reached its maximum value(saturated).Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.In extreme cases, the collector current can be as low as 2A volts.

2SA2056(TE85L,F) Features

the DC current gain for this device is 200 @ 300mA 2V
the vce saturation(Max) is 200mV @ 33mA, 1A
the emitter base voltage is kept at 7V

2SA2056(TE85L,F) Applications

There are a lot of Toshiba Semiconductor and Storage 2SA2056(TE85L,F) applications of single BJT transistors.

• Interface
• Driver
• Muting
• Inverter