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MPS650ZL1

MPS650ZL1

MPS650ZL1

ON Semiconductor

MPS650ZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MPS650ZL1 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material SILICON
Operating Temperature-55°C~150°C TJ
PackagingTape & Box (TB)
Published 2005
JESD-609 Code e0
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Additional FeatureEUROPEAN PART NUMBER
HTS Code8541.21.00.95
Subcategory Other Transistors
Voltage - Rated DC 40V
Max Power Dissipation625mW
Terminal Position BOTTOM
Peak Reflow Temperature (Cel) 240
Reach Compliance Code not_compliant
Current Rating2A
[email protected] Reflow Temperature-Max (s) 30
Base Part Number MPS650
Pin Count3
JESD-30 Code O-PBCY-T3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Transistor Application AMPLIFIER
Gain Bandwidth Product75MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 500mV
Max Collector Current 2A
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1A 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage40V
Transition Frequency 75MHz
Collector Emitter Saturation Voltage500mV
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 75
RoHS StatusNon-RoHS Compliant
Lead Free Contains Lead
In-Stock:85476 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$1.348320$1.34832
10$1.272000$12.72
100$1.200000$120
500$1.132075$566.0375
1000$1.067996$1067.996

MPS650ZL1 Product Details

MPS650ZL1 Overview


DC current gain in this device equals 75 @ 1A 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 75MHz is present in the part.A maximum collector current of 2A volts can be achieved.

MPS650ZL1 Features


the DC current gain for this device is 75 @ 1A 2V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 500mV @ 200mA, 2A
the emitter base voltage is kept at 5V
the current rating of this device is 2A
a transition frequency of 75MHz

MPS650ZL1 Applications


There are a lot of ON Semiconductor MPS650ZL1 applications of single BJT transistors.

  • Muting
  • Interface
  • Inverter
  • Driver

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