MPS650ZL1 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MPS650ZL1 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Box (TB)
Published
2005
JESD-609 Code
e0
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin/Lead (Sn/Pb)
Additional Feature
EUROPEAN PART NUMBER
HTS Code
8541.21.00.95
Subcategory
Other Transistors
Voltage - Rated DC
40V
Max Power Dissipation
625mW
Terminal Position
BOTTOM
Peak Reflow Temperature (Cel)
240
Reach Compliance Code
not_compliant
Current Rating
2A
[email protected] Reflow Temperature-Max (s)
30
Base Part Number
MPS650
Pin Count
3
JESD-30 Code
O-PBCY-T3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Transistor Application
AMPLIFIER
Gain Bandwidth Product
75MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
500mV
Max Collector Current
2A
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 1A 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
500mV @ 200mA, 2A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
75MHz
Collector Emitter Saturation Voltage
500mV
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
hFE Min
75
RoHS Status
Non-RoHS Compliant
Lead Free
Contains Lead
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.348320
$1.34832
10
$1.272000
$12.72
100
$1.200000
$120
500
$1.132075
$566.0375
1000
$1.067996
$1067.996
MPS650ZL1 Product Details
MPS650ZL1 Overview
DC current gain in this device equals 75 @ 1A 2V, which is the ratio of the base current to the collector current.A collector emitter saturation voltage of 500mV allows maximum design flexibility.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 500mV @ 200mA, 2A.With the emitter base voltage set at 5V, an efficient operation can be achieved.Its current rating is 2A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.A transition frequency of 75MHz is present in the part.A maximum collector current of 2A volts can be achieved.
MPS650ZL1 Features
the DC current gain for this device is 75 @ 1A 2V a collector emitter saturation voltage of 500mV the vce saturation(Max) is 500mV @ 200mA, 2A the emitter base voltage is kept at 5V the current rating of this device is 2A a transition frequency of 75MHz
MPS650ZL1 Applications
There are a lot of ON Semiconductor MPS650ZL1 applications of single BJT transistors.