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BUD42DG

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  • BUD42DG

BUD42DG

BUD42DG

ON Semiconductor

BUD42DG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

BUD42DG Datasheet

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Specifications
Name Value
Type Parameter
Lifecycle Status LAST SHIPMENTS (Last Updated: 2 weeks ago)
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Surface Mount YES
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~150°C TJ
Packaging Tube
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Additional Feature BUILT-IN ANTISATURATION NETWORK
Subcategory Other Transistors
Voltage - Rated DC 350V
Max Power Dissipation 25W
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 2A
[email protected] Reflow Temperature-Max (s) 40
Base Part Number BUD42
Pin Count 3
JESD-30 Code R-PSSO-G2
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 25W
Case Connection COLLECTOR
Transistor Application SWITCHING
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 350V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 10 @ 2A 5V
Current - Collector Cutoff (Max) 100μA
Vce Saturation (Max) @ Ib, Ic 1V @ 500mA, 2A
Collector Emitter Breakdown Voltage 350V
Collector Emitter Saturation Voltage 200mV
Collector Base Voltage (VCBO) 650V
Emitter Base Voltage (VEBO) 9V
hFE Min 8
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.30000 $0.3
500 $0.297 $148.5
1000 $0.294 $294
1500 $0.291 $436.5
2000 $0.288 $576
2500 $0.285 $712.5
BUD42DG Product Details

BUD42DG Overview


This device has a DC current gain of 10 @ 2A 5V, which is the ratio between the base current and the collector current.A collector emitter saturation voltage of 200mV allows maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 1V @ 500mA, 2A.Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 9V.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a 2A current rating.During maximum operation, collector current can be as low as 4A volts.

BUD42DG Features


the DC current gain for this device is 10 @ 2A 5V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 1V @ 500mA, 2A
the emitter base voltage is kept at 9V
the current rating of this device is 2A

BUD42DG Applications


There are a lot of ON Semiconductor BUD42DG applications of single BJT transistors.

  • Muting
  • Driver
  • Interface
  • Inverter

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