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MJE210TG

MJE210TG

MJE210TG

ON Semiconductor

MJE210TG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

MJE210TG Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Lifecycle Status OBSOLETE (Last Updated: 2 weeks ago)
Mounting Type Through Hole
Package / Case TO-225AA, TO-126-3
Surface MountNO
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature-65°C~150°C TJ
PackagingBulk
Published 2007
JESD-609 Code e3
Pbfree Code yes
Part StatusObsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory Other Transistors
Voltage - Rated DC -25V
Max Power Dissipation15W
Peak Reflow Temperature (Cel) 260
Reach Compliance Code unknown
Current Rating-5A
Frequency 65MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number MJE210
Pin Count3
Qualification StatusNot Qualified
Number of Elements 1
Element ConfigurationSingle
Power Dissipation15W
Transistor Application AMPLIFIER
Gain Bandwidth Product65MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 25V
Max Collector Current 5A
DC Current Gain (hFE) (Min) @ Ic, Vce 45 @ 2A 1V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage40V
Transition Frequency 65MHz
Collector Emitter Saturation Voltage1.8V
Collector Base Voltage (VCBO) 40V
Emitter Base Voltage (VEBO) 8V
hFE Min 70
RoHS StatusRoHS Compliant
Lead Free Lead Free
In-Stock:29410 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$0.24000$0.24
500$0.2376$118.8
1000$0.2352$235.2
1500$0.2328$349.2
2000$0.2304$460.8
2500$0.228$570

MJE210TG Product Details

MJE210TG Overview


This device has a DC current gain of 45 @ 2A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Keeping the emitter base voltage at 8V allows for a high level of efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 65MHz.During maximum operation, collector current can be as low as 5A volts.

MJE210TG Features


the DC current gain for this device is 45 @ 2A 1V
a collector emitter saturation voltage of 1.8V
the vce saturation(Max) is 1.8V @ 1A, 5A
the emitter base voltage is kept at 8V
the current rating of this device is -5A
a transition frequency of 65MHz

MJE210TG Applications


There are a lot of ON Semiconductor MJE210TG applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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