MJE210TG datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
MJE210TG Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 2 weeks ago)
Mounting Type
Through Hole
Package / Case
TO-225AA, TO-126-3
Surface Mount
NO
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-25V
Max Power Dissipation
15W
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Current Rating
-5A
Frequency
65MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
MJE210
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Element Configuration
Single
Power Dissipation
15W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
65MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
25V
Max Collector Current
5A
DC Current Gain (hFE) (Min) @ Ic, Vce
45 @ 2A 1V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
1.8V @ 1A, 5A
Collector Emitter Breakdown Voltage
40V
Transition Frequency
65MHz
Collector Emitter Saturation Voltage
1.8V
Collector Base Voltage (VCBO)
40V
Emitter Base Voltage (VEBO)
8V
hFE Min
70
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.24000
$0.24
500
$0.2376
$118.8
1000
$0.2352
$235.2
1500
$0.2328
$349.2
2000
$0.2304
$460.8
2500
$0.228
$570
MJE210TG Product Details
MJE210TG Overview
This device has a DC current gain of 45 @ 2A 1V, which is the ratio between the collector current and the base current.A collector emitter saturation voltage of 1.8V allows maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1.8V @ 1A, 5A.Keeping the emitter base voltage at 8V allows for a high level of efficiency.Its current rating is -5A, which means that it can sustain a maximum current for an indefinite period of time without degrading too much.In this part, there is a transition frequency of 65MHz.During maximum operation, collector current can be as low as 5A volts.
MJE210TG Features
the DC current gain for this device is 45 @ 2A 1V a collector emitter saturation voltage of 1.8V the vce saturation(Max) is 1.8V @ 1A, 5A the emitter base voltage is kept at 8V the current rating of this device is -5A a transition frequency of 65MHz
MJE210TG Applications
There are a lot of ON Semiconductor MJE210TG applications of single BJT transistors.