2SA2195,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website
SOT-23
2SA2195,LF Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mounting Type
Surface Mount
Package / Case
3-SMD, Flat Lead
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Power - Max
500mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
200 @ 300mA 2V
Current - Collector Cutoff (Max)
100nA ICBO
Vce Saturation (Max) @ Ib, Ic
200mV @ 33mA, 1A
Voltage - Collector Emitter Breakdown (Max)
50V
Current - Collector (Ic) (Max)
1.7A
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$0.438000
$0.438
10
$0.413208
$4.13208
100
$0.389818
$38.9818
500
$0.367753
$183.8765
1000
$0.346937
$346.937
2SA2195,LF Product Details
2SA2195,LF Overview
This device has a DC current gain of 200 @ 300mA 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 33mA, 1A.This device displays a 50V maximum voltage - Collector Emitter Breakdown.
2SA2195,LF Features
the DC current gain for this device is 200 @ 300mA 2V the vce saturation(Max) is 200mV @ 33mA, 1A
2SA2195,LF Applications
There are a lot of Toshiba Semiconductor and Storage 2SA2195,LF applications of single BJT transistors.