Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2SA2195,LF

2SA2195,LF

2SA2195,LF

Toshiba Semiconductor and Storage

2SA2195,LF datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SA2195,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 3-SMD, Flat Lead
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 500mW
Transistor Type PNP
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 300mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 200mV @ 33mA, 1A
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 1.7A
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.438000 $0.438
10 $0.413208 $4.13208
100 $0.389818 $38.9818
500 $0.367753 $183.8765
1000 $0.346937 $346.937
2SA2195,LF Product Details

2SA2195,LF Overview


This device has a DC current gain of 200 @ 300mA 2V, which is the ratio between the collector current and the base current.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 200mV @ 33mA, 1A.This device displays a 50V maximum voltage - Collector Emitter Breakdown.

2SA2195,LF Features


the DC current gain for this device is 200 @ 300mA 2V
the vce saturation(Max) is 200mV @ 33mA, 1A

2SA2195,LF Applications


There are a lot of Toshiba Semiconductor and Storage 2SA2195,LF applications of single BJT transistors.

  • Interface
  • Driver
  • Inverter
  • Muting

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News