2SA965-Y,F(J

new-10%

Manufacturer part number:2SA965-Y,F(J

Manufacturer:Toshiba Semiconductor and Storage

Description:TRANS PNP 800MA 120V TO226-3

Case Package:SOT-23

Datasheet:2SA965-Y,F(J Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 Long Body
Supplier Device Package	LSTM
Operating Temperature	150°C TJ
Packaging	Bulk
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Power - Max	900mW
Transistor Type	PNP
DC Current Gain (hFE) (Min) @ Ic, Vce	80 @ 100mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	1V @ 50mA, 500mA
Voltage - Collector Emitter Breakdown (Max)	120V
Current - Collector (Ic) (Max)	800mA
Frequency - Transition	120MHz