2SC4116-O(TE85L,F)

join

new-10%

Manufacturer part number:2SC4116-O(TE85L,F)

Manufacturer:Toshiba Semiconductor and Storage

Description:2SC4116-O(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:2SC4116-O(TE85L,F) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	14 Weeks
Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323
Operating Temperature	125°C TJ
Packaging	Cut Tape (CT)
Pbfree Code	yes
Part Status	Discontinued
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Reach Compliance Code	unknown
Power - Max	100mW
Transistor Type	NPN
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 2mA 6V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max)	50V
Current - Collector (Ic) (Max)	150mA
Frequency - Transition	80MHz
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$0.195000	$0.195
10	$0.183962	$1.83962
100	$0.173549	$17.3549
500	$0.163726	$81.863
1000	$0.154458	$154.458

2SC4116-O(TE85L,F) Overview

This device has a DC current gain of 70 @ 2mA 6V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Device displays Collector Emitter Breakdown (50V maximal voltage).