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2SC4116-O(TE85L,F)

  • 2SC4116-O(TE85L,F)
  • 2SC4116-O(TE85L,F)

2SC4116-O(TE85L,F)

2SC4116-O(TE85L,F)

Toshiba Semiconductor and Storage

2SC4116-O(TE85L,F) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SC4116-O(TE85L,F) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 14 Weeks
Mounting Type Surface Mount
Package / Case SC-70, SOT-323
Operating Temperature 125°C TJ
Packaging Cut Tape (CT)
Pbfree Code yes
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Reach Compliance Code unknown
Power - Max 100mW
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 70 @ 2mA 6V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 250mV @ 10mA, 100mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 150mA
Frequency - Transition 80MHz
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.195000 $0.195
10 $0.183962 $1.83962
100 $0.173549 $17.3549
500 $0.163726 $81.863
1000 $0.154458 $154.458
2SC4116-O(TE85L,F) Product Details

2SC4116-O(TE85L,F) Overview


This device has a DC current gain of 70 @ 2mA 6V, which is the ratio between the collector current and the base current.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Device displays Collector Emitter Breakdown (50V maximal voltage).

2SC4116-O(TE85L,F) Features


the DC current gain for this device is 70 @ 2mA 6V
the vce saturation(Max) is 250mV @ 10mA, 100mA

2SC4116-O(TE85L,F) Applications


There are a lot of Toshiba Semiconductor and Storage 2SC4116-O(TE85L,F) applications of single BJT transistors.

  • Inverter
  • Driver
  • Muting
  • Interface

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