2SA1162YT1 Overview
In this device, the DC current gain is 120 @ 2mA 6V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.This system offers maximum design flexibility due to a collector emitter saturation voltage of 300mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 300mV @ 10mA, 100mA.Keeping the emitter base voltage at 7V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is -150mA.In this part, there is a transition frequency of 80MHz.When collector current reaches its maximum, it can reach 150mA volts.
2SA1162YT1 Features
the DC current gain for this device is 120 @ 2mA 6V
a collector emitter saturation voltage of 300mV
the vce saturation(Max) is 300mV @ 10mA, 100mA
the emitter base voltage is kept at 7V
the current rating of this device is -150mA
a transition frequency of 80MHz
2SA1162YT1 Applications
There are a lot of ON Semiconductor 2SA1162YT1 applications of single BJT transistors.
- Muting
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- Driver
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- Inverter
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- Interface
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