DXT690BP5-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 2A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.A VCE saturation (Max) of 350mV @ 150mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3A to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Parts of this part have transition frequencies of 150MHz.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
DXT690BP5-13 Features
the DC current gain for this device is 150 @ 2A 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 150mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz
DXT690BP5-13 Applications
There are a lot of Diodes Incorporated DXT690BP5-13 applications of single BJT transistors.
- Muting
- Inverter
- Interface
- Driver
