DXT690BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website
SOT-23
DXT690BP5-13 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
15 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
PowerDI™ 5
Number of Pins
3
Weight
95.991485mg
Transistor Element Material
SILICON
Manufacturer Package Identifier
POWERDI-5
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2010
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Max Power Dissipation
3.2W
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Frequency
150MHz
[email protected] Reflow Temperature-Max (s)
40
Base Part Number
DXT690
Pin Count
4
Number of Elements
1
Element Configuration
Single
Power Dissipation
3.2W
Case Connection
COLLECTOR
Power - Max
740mW
Transistor Application
SWITCHING
Gain Bandwidth Product
150MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
45V
Max Collector Current
3A
DC Current Gain (hFE) (Min) @ Ic, Vce
150 @ 2A 2V
Current - Collector Cutoff (Max)
20nA
JEDEC-95 Code
TO-252
Vce Saturation (Max) @ Ib, Ic
350mV @ 150mA, 3A
Collector Emitter Breakdown Voltage
45V
Transition Frequency
150MHz
Collector Emitter Saturation Voltage
350mV
Max Breakdown Voltage
45V
Collector Base Voltage (VCBO)
60V
Emitter Base Voltage (VEBO)
5V
Continuous Collector Current
3A
Height
1.15mm
Length
4.05mm
Width
5.45mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$10.786160
$10.78616
10
$10.175623
$101.75623
100
$9.599644
$959.9644
500
$9.056268
$4528.134
1000
$8.543649
$8543.649
DXT690BP5-13 Product Details
DXT690BP5-13 Overview
As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 2A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.A VCE saturation (Max) of 350mV @ 150mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3A to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Parts of this part have transition frequencies of 150MHz.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.
DXT690BP5-13 Features
the DC current gain for this device is 150 @ 2A 2V a collector emitter saturation voltage of 350mV the vce saturation(Max) is 350mV @ 150mA, 3A the emitter base voltage is kept at 5V a transition frequency of 150MHz
DXT690BP5-13 Applications
There are a lot of Diodes Incorporated DXT690BP5-13 applications of single BJT transistors.