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DXT690BP5-13

DXT690BP5-13

DXT690BP5-13

Diodes Incorporated

DXT690BP5-13 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Diodes Incorporated stock available on our website

SOT-23

DXT690BP5-13 Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 15 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case PowerDI™ 5
Number of Pins 3
Weight 95.991485mg
Transistor Element Material SILICON
Manufacturer Package Identifier POWERDI-5
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Matte Tin (Sn)
Subcategory Other Transistors
Max Power Dissipation 3.2W
Terminal Position DUAL
Terminal Form FLAT
Peak Reflow Temperature (Cel) 260
Frequency 150MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number DXT690
Pin Count 4
Number of Elements 1
Element Configuration Single
Power Dissipation 3.2W
Case Connection COLLECTOR
Power - Max 740mW
Transistor Application SWITCHING
Gain Bandwidth Product 150MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 150 @ 2A 2V
Current - Collector Cutoff (Max) 20nA
JEDEC-95 Code TO-252
Vce Saturation (Max) @ Ib, Ic 350mV @ 150mA, 3A
Collector Emitter Breakdown Voltage 45V
Transition Frequency 150MHz
Collector Emitter Saturation Voltage 350mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
Continuous Collector Current 3A
Height 1.15mm
Length 4.05mm
Width 5.45mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.786160 $10.78616
10 $10.175623 $101.75623
100 $9.599644 $959.9644
500 $9.056268 $4528.134
1000 $8.543649 $8543.649
DXT690BP5-13 Product Details

DXT690BP5-13 Overview


As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 150 @ 2A 2V.This design offers maximum flexibility with a collector emitter saturation voltage of 350mV.A VCE saturation (Max) of 350mV @ 150mA, 3A means Ic has reached its maximum value(saturated).Continuous collector voltages should be kept at 3A to achieve high efficiency.Emitter base voltages of 5V can achieve high levels of efficiency.Parts of this part have transition frequencies of 150MHz.An input voltage of 45V volts is the breakdown voltage.Maximum collector currents can be below 3A volts.

DXT690BP5-13 Features


the DC current gain for this device is 150 @ 2A 2V
a collector emitter saturation voltage of 350mV
the vce saturation(Max) is 350mV @ 150mA, 3A
the emitter base voltage is kept at 5V
a transition frequency of 150MHz

DXT690BP5-13 Applications


There are a lot of Diodes Incorporated DXT690BP5-13 applications of single BJT transistors.

  • Muting
  • Inverter
  • Interface
  • Driver

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