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2SD1223(TE16L1,NQ)

  • 2SD1223(TE16L1,NQ)
  • 2SD1223(TE16L1,NQ)

2SD1223(TE16L1,NQ)

2SD1223(TE16L1,NQ)

Toshiba Semiconductor and Storage

2SD1223(TE16L1,NQ) datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Toshiba Semiconductor and Storage stock available on our website

SOT-23

2SD1223(TE16L1,NQ) Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Contact Plating Silver, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 63
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Max Power Dissipation 1W
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Polarity NPN
Element Configuration Single
Case Connection COLLECTOR
Power - Max 1W
Transistor Application SWITCHING
Transistor Type NPN - Darlington
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 4A
DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 3A 2V
Current - Collector Cutoff (Max) 20μA ICBO
Vce Saturation (Max) @ Ib, Ic 1.5V @ 6mA, 3A
Collector Emitter Breakdown Voltage 80V
Collector Emitter Saturation Voltage 1.5V
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5V
hFE Min 2000
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.40000 $0.4
500 $0.396 $198
1000 $0.392 $392
1500 $0.388 $582
2000 $0.384 $768
2500 $0.38 $950
2SD1223(TE16L1,NQ) Product Details

2SD1223(TE16L1,NQ) Overview


As explained above, DC current gain takes into account the rate at which the base current flows through the collector current; therefore, DC current gain for this device is 1000 @ 3A 2V.As it features a collector emitter saturation voltage of 1.5V, it allows for maximum design flexibility.When VCE saturation is 1.5V @ 6mA, 3A, transistor means Ic has reached transistors maximum value (saturated).A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.During maximum operation, collector current can be as low as 4A volts.

2SD1223(TE16L1,NQ) Features


the DC current gain for this device is 1000 @ 3A 2V
a collector emitter saturation voltage of 1.5V
the vce saturation(Max) is 1.5V @ 6mA, 3A
the emitter base voltage is kept at 5V

2SD1223(TE16L1,NQ) Applications


There are a lot of Toshiba Semiconductor and Storage 2SD1223(TE16L1,NQ) applications of single BJT transistors.

  • Muting
  • Inverter
  • Driver
  • Interface

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