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2SJ610(TE16L1,NQ)

2SJ610(TE16L1,NQ)

2SJ610(TE16L1,NQ)

Toshiba Semiconductor and Storage

MOSFET P-CH 250V 2A PW-MOLD

SOT-23

2SJ610(TE16L1,NQ) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Supplier Device Package PW-MOLD
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 20W Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 2.55Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 381pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2A Ta
Gate Charge (Qg) (Max) @ Vgs 24nC @ 10V
Rise Time 5ns
Drain to Source Voltage (Vdss) 250V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 6 ns
Continuous Drain Current (ID) 2A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 381pF
Rds On Max 2.55 Ω
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

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