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2SK2845(TE16L1,Q)

2SK2845(TE16L1,Q)

2SK2845(TE16L1,Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 900V 1A DP

SOT-23

2SK2845(TE16L1,Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Reach Compliance Code unknown
Number of Elements 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Power Dissipation 40W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 9 Ω @ 500mA, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C 1A Ta
Gate Charge (Qg) (Max) @ Vgs 15nC @ 10V
Rise Time 20ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 30 ns
Continuous Drain Current (ID) 1A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 900V
RoHS Status RoHS Compliant

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