2SK3565(Q,M)

new-10%

Manufacturer part number:2SK3565(Q,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 900V 5A TO-220SIS

Case Package:SOT-23

Datasheet:2SK3565(Q,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Contact Plating	Copper, Silver, Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Supplier Device Package	TO-220SIS
Operating Temperature	150°C TJ
Packaging	Tube
Published	2003
Series	π-MOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	45W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	2.5Ohm @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	5A Ta
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V
Rise Time	30ns
Drain to Source Voltage (Vdss)	900V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	60 ns
Continuous Drain Current (ID)	5A
Gate to Source Voltage (Vgs)	30V
Input Capacitance	1.15nF
Rds On Max	2.5 Ω
Radiation Hardening	No
RoHS Status	RoHS Compliant