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2SK3844(Q)

2SK3844(Q)

2SK3844(Q)

Toshiba Semiconductor and Storage

MOSFET N-CH 60V 45A TO220NIS

SOT-23

2SK3844(Q) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Bulk
Published 2006
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Power Dissipation 450W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 5.8m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 12400pF @ 10V
Current - Continuous Drain (Id) @ 25°C 45A Ta
Gate Charge (Qg) (Max) @ Vgs 196nC @ 10V
Rise Time 80ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 104 ns
Turn-Off Delay Time 104 ns
Continuous Drain Current (ID) 45A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 60V
Height 4.5mm
Length 10mm
Width 8.1mm
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.124813 $8.124813
10 $7.664917 $76.64917
100 $7.231055 $723.1055
500 $6.821749 $3410.8745
1000 $6.435612 $6435.612

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