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RN1710,LF

  • RN1710,LF
  • RN1710,LF

RN1710,LF

RN1710,LF

Toshiba Semiconductor and Storage

NPNX2 BRT Q1BSR4.7KOHM Q1BERINF.

SOT-23

RN1710,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case 5-TSSOP, SC-70-5, SOT-353
Packaging Tape & Reel (TR)
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Power - Max 200mW
Transistor Type 2 NPN - Pre-Biased (Dual)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 1mA 5V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 300mV @ 250μA, 5mA
Voltage - Collector Emitter Breakdown (Max) 50V
Current - Collector (Ic) (Max) 100mA
Frequency - Transition 250MHz
Resistor - Base (R1) 4.7k Ω
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.170111 $0.170111
10 $0.160482 $1.60482
100 $0.151399 $15.1399
500 $0.142829 $71.4145
1000 $0.134744 $134.744

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