RN1903,LF(CT

new-10%

Manufacturer part number:RN1903,LF(CT

Manufacturer:Toshiba Semiconductor and Storage

Description:TRANS 2NPN PREBIAS 0.2W US6

Case Package:SOT-23

Datasheet:RN1903,LF(CT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Transistor Element Material	SILICON
Packaging	Cut Tape (CT)
Published	2014
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	6
Additional Feature	BUILT IN BIAS RESISTANCE RATIO IS 1
Max Power Dissipation	200mW
Terminal Form	GULL WING
Reach Compliance Code	unknown
JESD-30 Code	R-PDSO-G6
Operating Temperature (Max)	150°C
Number of Elements	2
Configuration	SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Power - Max	200mW
Transistor Application	SWITCHING
Polarity/Channel Type	NPN
Transistor Type	2 NPN - Pre-Biased (Dual)
Collector Emitter Voltage (VCEO)	300mV
Max Collector Current	100mA
DC Current Gain (hFE) (Min) @ Ic, Vce	70 @ 10mA 5V
Current - Collector Cutoff (Max)	100nA ICBO
Vce Saturation (Max) @ Ib, Ic	300mV @ 250μA, 5mA
Collector Emitter Breakdown Voltage	50V
Transition Frequency	250MHz
Max Breakdown Voltage	50V
Frequency - Transition	250MHz
Resistor - Base (R1)	22k Ω
Resistor - Emitter Base (R2)	22k Ω
RoHS Status	RoHS Compliant