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SSM3K329R,LF

SSM3K329R,LF

SSM3K329R,LF

Toshiba Semiconductor and Storage

MOSFET N CH 30V 3.5A 2-3Z1A

SOT-23

SSM3K329R,LF Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-3 Flat Leads
Transistor Element Material SILICON
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series U-MOSIII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-PDSO-F3
Number of Elements 1
Configuration SINGLE WITH BUILT-IN DIODE
Number of Channels 1
Power Dissipation-Max 1W Ta
Operating Mode ENHANCEMENT MODE
Power Dissipation 1W
Turn On Delay Time 9.2 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 126m Ω @ 1A, 4V
Vgs(th) (Max) @ Id 1V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 123pF @ 15V
Current - Continuous Drain (Id) @ 25°C 3.5A Ta
Gate Charge (Qg) (Max) @ Vgs 1.5nC @ 4V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4V
Vgs (Max) ±12V
Turn-Off Delay Time 6.4 ns
Continuous Drain Current (ID) 3.5A
Gate to Source Voltage (Vgs) 12V
Drain to Source Breakdown Voltage 30V
Height 880μm
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
3,000 $0.09000 $0.27
6,000 $0.08500 $0.51
15,000 $0.07750 $1.1625
30,000 $0.07250 $2.175
75,000 $0.07000 $5.25

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