SSM6N7002CFU,LF

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Manufacturer part number:SSM6N7002CFU,LF

Manufacturer:Toshiba Semiconductor and Storage

Description:SSM6N7002CFU,LF datasheet pdf and Transistors - FETs, MOSFETs - Arrays product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:SSM6N7002CFU,LF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	6-TSSOP, SC-88, SOT-363
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Power Dissipation	285mW
Power - Max	285mW
FET Type	2 N-Channel (Dual)
Rds On (Max) @ Id, Vgs	3.9 Ω @ 100mA, 10V
Vgs(th) (Max) @ Id	2.1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	17pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	0.35nC @ 4.5V
Drain to Source Voltage (Vdss)	60V
Continuous Drain Current (ID)	170mA
FET Feature	Standard
RoHS Status	RoHS Compliant

Quantity	Unit Price	Ext. Price

SSM6N7002CFU,LF Description

The small-signal model of the MOS transistor is useful as an amplifier. It is easy to analyze the circuits using small-signal models. In summary, so far, we have read that using the MOS Transistor as an amplifier should be operated in the saturation region.