TJ50S06M3L(T6L1,NQ

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TJ50S06M3L(T6L1,NQ

Manufacturer part number:TJ50S06M3L(T6L1,NQ

Manufacturer:Toshiba Semiconductor and Storage

Description:TJ50S06M3L(T6L1,NQ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Toshiba Semiconductor and Storage stock available on our website

Case Package:SOT-23

Datasheet:TJ50S06M3L(T6L1,NQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins	3
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	1997
Series	U-MOSVI
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	90W Tc
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	13.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	6290pF @ 10V
Current - Continuous Drain (Id) @ 25°C	50A Ta
Gate Charge (Qg) (Max) @ Vgs	124nC @ 10V
Rise Time	77ns
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	+10V, -20V
Fall Time (Typ)	195 ns
Continuous Drain Current (ID)	50A
Gate to Source Voltage (Vgs)	10V
Radiation Hardening	No
RoHS Status	RoHS Compliant