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TK100A08N1,S4X

TK100A08N1,S4X

TK100A08N1,S4X

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tube 3.2mOhm @ 50A, 10V ±20V 9000pF @ 40V 130nC @ 10V 80V TO-220-3 Full Pack

SOT-23

TK100A08N1,S4X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Weight 6.000006g
Operating Temperature 150°C TJ
Packaging Tube
Series U-MOSVIII-H
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 45W Tc
Element Configuration Single
Turn On Delay Time 53 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 3.2mOhm @ 50A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 9000pF @ 40V
Current - Continuous Drain (Id) @ 25°C 100A Tc
Gate Charge (Qg) (Max) @ Vgs 130nC @ 10V
Rise Time 26ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 46 ns
Turn-Off Delay Time 140 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 9nF
Drain to Source Resistance 2.6mOhm
Rds On Max 3.2 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.215919 $3.215919
10 $3.033886 $30.33886
100 $2.862156 $286.2156
500 $2.700148 $1350.074
1000 $2.547309 $2547.309
TK100A08N1,S4X Product Details

TK100A08N1,S4X Overview


An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 9000pF @ 40V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 100A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 140 ns.This device has a drain-to-source resistance of 2.6mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 53 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 80V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

TK100A08N1,S4X Features


a continuous drain current (ID) of 100A
the turn-off delay time is 140 ns
single MOSFETs transistor is 2.6mOhm
a 80V drain to source voltage (Vdss)


TK100A08N1,S4X Applications


There are a lot of Toshiba Semiconductor and Storage
TK100A08N1,S4X applications of single MOSFETs transistors.


  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies

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