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TK100L60W,VQ

TK100L60W,VQ

TK100L60W,VQ

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tube 18m Ω @ 50A, 10V ±30V 15000pF @ 30V 360nC @ 10V 600V TO-3PL

SOT-23

TK100L60W,VQ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3PL
Operating Temperature 150°C TJ
Packaging Tube
Series DTMOSIV
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 18mOhm
Capacitance 15nF
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 797W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
FET Type N-Channel
Rds On (Max) @ Id, Vgs 18m Ω @ 50A, 10V
Vgs(th) (Max) @ Id 3.7V @ 5mA
Input Capacitance (Ciss) (Max) @ Vds 15000pF @ 30V
Current - Continuous Drain (Id) @ 25°C 100A Ta
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Rise Time 130ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 125 ns
Turn-Off Delay Time 690 ns
Continuous Drain Current (ID) 100A
Gate to Source Voltage (Vgs) 30V
FET Feature Super Junction
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $8.189840 $8.18984
10 $7.726264 $77.26264
100 $7.288928 $728.8928
500 $6.876348 $3438.174
1000 $6.487120 $6487.12
TK100L60W,VQ Product Details

TK100L60W,VQ Overview


A device's maximal input capacitance is 15000pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 100A, which represents the maximum continuous current it can conduct.Its turn-off delay time is 690 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 30V volts.This transistor requires a 600V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (10V).

TK100L60W,VQ Features


a continuous drain current (ID) of 100A
the turn-off delay time is 690 ns
a 600V drain to source voltage (Vdss)


TK100L60W,VQ Applications


There are a lot of Toshiba Semiconductor and Storage
TK100L60W,VQ applications of single MOSFETs transistors.


  • Consumer Appliances
  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples

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