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IRLR2908TRPBF

IRLR2908TRPBF

IRLR2908TRPBF

Infineon Technologies

IRLR2908TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website

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IRLR2908TRPBF Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series HEXFET®
JESD-609 Code e3
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Resistance 28mOhm
Terminal Finish Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Voltage - Rated DC 80V
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating 30A
[email protected] Reflow Temperature-Max (s) 30
JESD-30 Code R-PSSO-G2
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 120W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 120W
Case Connection DRAIN
Turn On Delay Time 12 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 28m Ω @ 23A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1890pF @ 25V
Current - Continuous Drain (Id) @ 25°C 30A Tc
Gate Charge (Qg) (Max) @ Vgs 33nC @ 4.5V
Rise Time 95ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±16V
Fall Time (Typ) 55 ns
Turn-Off Delay Time 36 ns
Continuous Drain Current (ID) 30A
Threshold Voltage 1V
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 16V
Drain to Source Breakdown Voltage 80V
Dual Supply Voltage 80V
Avalanche Energy Rating (Eas) 250 mJ
Max Junction Temperature (Tj) 175°C
Nominal Vgs 1 V
Height 2.52mm
Length 6.7056mm
Width 6.22mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
2,000 $0.58388 $1.16776
6,000 $0.55789 $3.34734
10,000 $0.53933 $5.3933
IRLR2908TRPBF Product Details

IRLR2908TRPBF Description


IRLR2908TRPBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. Based on the latest processing techniques, it is able to achieve extremely low on-resistance per silicon area. Moreover, it is capable of providing a fast switching speed and improved repetitive avalanche rating. All of these enable the power MOSFET IRLR2908TRPBF to be efficient and reliable in various applications.



IRLR2908TRPBF Features


  • Available in the D-Pak package

  • Extremely low on-resistance per silicon area

  • Fast switching speed

  • Improved repetitive avalanche rating

  • Operating junction temperature of +175 °C



IRLR2908TRPBF Applications


  • High-frequency synchronous buck converters

  • High-frequency isolated DC-DC converters with synchronous rectification


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