IRLR2908TRPBF datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IRLR2908TRPBF Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tape & Reel (TR)
Published
2010
Series
HEXFET®
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Resistance
28mOhm
Terminal Finish
Matte Tin (Sn) - with Nickel (Ni) barrier
Additional Feature
AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Subcategory
FET General Purpose Power
Voltage - Rated DC
80V
Technology
MOSFET (Metal Oxide)
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
30A
[email protected] Reflow Temperature-Max (s)
30
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
120W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
120W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
28m Ω @ 23A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1890pF @ 25V
Current - Continuous Drain (Id) @ 25°C
30A Tc
Gate Charge (Qg) (Max) @ Vgs
33nC @ 4.5V
Rise Time
95ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±16V
Fall Time (Typ)
55 ns
Turn-Off Delay Time
36 ns
Continuous Drain Current (ID)
30A
Threshold Voltage
1V
JEDEC-95 Code
TO-252AA
Gate to Source Voltage (Vgs)
16V
Drain to Source Breakdown Voltage
80V
Dual Supply Voltage
80V
Avalanche Energy Rating (Eas)
250 mJ
Max Junction Temperature (Tj)
175°C
Nominal Vgs
1 V
Height
2.52mm
Length
6.7056mm
Width
6.22mm
Radiation Hardening
No
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2,000
$0.58388
$1.16776
6,000
$0.55789
$3.34734
10,000
$0.53933
$5.3933
IRLR2908TRPBF Product Details
IRLR2908TRPBF Description
IRLR2908TRPBF belongs to the family of HEXFET? power MOSFETs that are manufactured by Infineon Technologies. Based on the latest processing techniques, it is able to achieve extremely low on-resistance per silicon area. Moreover, it is capable of providing a fast switching speed and improved repetitive avalanche rating. All of these enable the power MOSFET IRLR2908TRPBF to be efficient and reliable in various applications.
IRLR2908TRPBF Features
Available in the D-Pak package
Extremely low on-resistance per silicon area
Fast switching speed
Improved repetitive avalanche rating
Operating junction temperature of +175 °C
IRLR2908TRPBF Applications
High-frequency synchronous buck converters
High-frequency isolated DC-DC converters with synchronous rectification