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IRFPC60LCPBF

IRFPC60LCPBF

IRFPC60LCPBF

Vishay Siliconix

MOSFET (Metal Oxide) N-Channel Tube 400mOhm @ 9.6A, 10V ±30V 3500pF @ 25V 120nC @ 10V 600V TO-247-3

SOT-23

IRFPC60LCPBF Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Supplier Device Package TO-247-3
Weight 38.000013g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 400mOhm
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Number of Channels 1
Power Dissipation-Max 280W Tc
Element Configuration Single
Power Dissipation 280W
Turn On Delay Time 17 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 400mOhm @ 9.6A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3500pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 120nC @ 10V
Rise Time 57ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 38 ns
Turn-Off Delay Time 43 ns
Continuous Drain Current (ID) 16A
Threshold Voltage 4V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Input Capacitance 3.5nF
Drain to Source Resistance 400mOhm
Rds On Max 400 mΩ
Nominal Vgs 4 V
Height 20.7mm
Length 15.87mm
Width 5.31mm
REACH SVHC Unknown
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $6.94000 $6.94
25 $5.61640 $140.41
100 $5.13650 $513.65
500 $4.20080 $2100.4
1,000 $3.57700 $3.577
2,500 $3.40906 $6.81812
IRFPC60LCPBF Product Details

IRFPC60LCPBF Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 3500pF @ 25V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has 600V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 600V.As a result of its turn-off delay time, which is 43 ns, the device has taken time to charge its input capacitance before drain current conduction begins.In a MOSFET, Drain to Source Resistance is the resistance between the drain and the source when gate-to-source voltage (VGS) is applied to bias it into the on state; in this device, this resistance is 400mOhm.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 17 ns.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 30VV.The threshold voltage is the point at which an electrical device activates any one of its operations, which for this transistor is 4V.The transistor must receive a 600V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

IRFPC60LCPBF Features


a continuous drain current (ID) of 16A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 43 ns
single MOSFETs transistor is 400mOhm
a threshold voltage of 4V
a 600V drain to source voltage (Vdss)


IRFPC60LCPBF Applications


There are a lot of Vishay Siliconix
IRFPC60LCPBF applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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