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TK14A65W,S5X

TK14A65W,S5X

TK14A65W,S5X

Toshiba Semiconductor and Storage

MOSFET N-CH 650V 13.7A TO-220

SOT-23

TK14A65W,S5X Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Supplier Device Package TO-220SIS
Weight 6.000006g
Operating Temperature 150°C TJ
Packaging Tube
Published 2004
Series DTMOSIV
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 40W Tc
Element Configuration Single
Turn On Delay Time 60 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 250mOhm @ 6.9A, 10V
Vgs(th) (Max) @ Id 3.5V @ 690μA
Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 300V
Current - Continuous Drain (Id) @ 25°C 13.7A Ta
Gate Charge (Qg) (Max) @ Vgs 35nC @ 10V
Rise Time 20ns
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 7 ns
Turn-Off Delay Time 110 ns
Continuous Drain Current (ID) 13.7A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 650V
Input Capacitance 1.3nF
Drain to Source Resistance 220mOhm
Rds On Max 250 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.209248 $1.209248
10 $1.140800 $11.408
100 $1.076226 $107.6226
500 $1.015308 $507.654
1000 $0.957838 $957.838

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