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TK15A60D(STA4,Q,M)

TK15A60D(STA4,Q,M)

TK15A60D(STA4,Q,M)

Toshiba Semiconductor and Storage

MOSFET N-CH 600V 15A TO-220SIS

SOT-23

TK15A60D(STA4,Q,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Operating Temperature 150°C TJ
Packaging Tube
Published 2009
Series π-MOSVII
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 50W Tc
Element Configuration Single
Power Dissipation 50W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 370m Ω @ 7.5A, 10V
Vgs(th) (Max) @ Id 4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 2600pF @ 25V
Current - Continuous Drain (Id) @ 25°C 15A Ta
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 50ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 25 ns
Continuous Drain Current (ID) 15A
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.813210 $0.81321
10 $0.767180 $7.6718
100 $0.723754 $72.3754
500 $0.682787 $341.3935
1000 $0.644139 $644.139

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