TK160F10N1L,LQ

new-10%

Manufacturer part number:TK160F10N1L,LQ

Manufacturer:Toshiba Semiconductor and Storage

Description:X35 Pb-f Power Mosfet Transistor TO-220SM(W) PD=375W F=1MHZ

Case Package:SOT-23

Datasheet:TK160F10N1L,LQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	175°C
Packaging	Tape & Reel (TR)
Series	U-MOSVIII-H
Part Status	Active
Number of Terminations	2
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Reference Standard	AEC-Q101
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	375W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	2.4m Ω @ 80A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	10100pF @ 10V
Current - Continuous Drain (Id) @ 25°C	160A Ta
Gate Charge (Qg) (Max) @ Vgs	122nC @ 10V
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	6V 10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	160A
Drain-source On Resistance-Max	0.0037Ohm
Pulsed Drain Current-Max (IDM)	480A
DS Breakdown Voltage-Min	100V
Avalanche Energy Rating (Eas)	466 mJ
RoHS Status	RoHS Compliant