TK16J60W,S1VQ

new-10%

Manufacturer part number:TK16J60W,S1VQ

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N CH 600V 15.8A TO-3P(N)

Case Package:SOT-23

Datasheet:TK16J60W,S1VQ Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-3P-3, SC-65-3
Operating Temperature	150°C TJ
Packaging	Tube
Published	2013
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Capacitance	1.35nF
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	130W Tc
Element Configuration	Single
Power Dissipation	130W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	190m Ω @ 7.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 790μA
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 300V
Current - Continuous Drain (Id) @ 25°C	15.8A Ta
Gate Charge (Qg) (Max) @ Vgs	38nC @ 10V
Rise Time	25ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	5 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	15.8A
Gate to Source Voltage (Vgs)	30V
Drain to Source Breakdown Voltage	600V
FET Feature	Super Junction
RoHS Status	RoHS Compliant