TK20E60W,S1VX

new-10%

Manufacturer part number:TK20E60W,S1VX

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-Ch DTMOSIV 600 V 165W 1680pF 20A

Case Package:SOT-23

Datasheet:TK20E60W,S1VX Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Number of Pins	3
Weight	6.000006g
Operating Temperature	150°C TJ
Packaging	Tube
Published	2013
Series	DTMOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	165W Tc
Element Configuration	Single
Turn On Delay Time	50 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	155m Ω @ 10A, 10V
Vgs(th) (Max) @ Id	3.7V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1680pF @ 300V
Current - Continuous Drain (Id) @ 25°C	20A Ta
Gate Charge (Qg) (Max) @ Vgs	48nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	100 ns
Continuous Drain Current (ID)	20A
Gate to Source Voltage (Vgs)	30V
Radiation Hardening	No
RoHS Status	RoHS Compliant