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TK380P65Y,RQ

TK380P65Y,RQ

TK380P65Y,RQ

Toshiba Semiconductor and Storage

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 380mOhm @ 4.9A, 10V ±30V 590pF @ 300V 20nC @ 10V 650V TO-252-3, DPak (2 Leads + Tab), SC-63

SOT-23

TK380P65Y,RQ Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Series DTMOSV
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 80W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 380mOhm @ 4.9A, 10V
Vgs(th) (Max) @ Id 4V @ 360μA
Input Capacitance (Ciss) (Max) @ Vds 590pF @ 300V
Current - Continuous Drain (Id) @ 25°C 9.7A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 10V
Drain to Source Voltage (Vdss) 650V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
TK380P65Y,RQ Product Details

TK380P65Y,RQ Overview


CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 590pF @ 300V.The transistor must receive a 650V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (10V).

TK380P65Y,RQ Features


a 650V drain to source voltage (Vdss)


TK380P65Y,RQ Applications


There are a lot of Toshiba Semiconductor and Storage
TK380P65Y,RQ applications of single MOSFETs transistors.


  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification
  • Battery Protection Circuit
  • Telecom 1 Sever Power Supplies
  • Industrial Power Supplies
  • PFC stages, hard switching PWM stages and resonant switching
  • PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
  • Lighting, Server, Telecom and UPS.

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