BSP125L6327HTSA1

new-10%

Manufacturer part number:BSP125L6327HTSA1

Manufacturer:Infineon Technologies

Description:Trans MOSFET N-CH 600V 0.12A 4-Pin(3+Tab) SOT-223 T/R

Case Package:SOT-23

Datasheet:BSP125L6327HTSA1 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-261-4, TO-261AA
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2003
Series	SIPMOS®
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn)
Additional Feature	AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1.8W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.8W
Case Connection	DRAIN
Turn On Delay Time	7.7 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	45 Ω @ 120mA, 10V
Vgs(th) (Max) @ Id	2.3V @ 94μA
Input Capacitance (Ciss) (Max) @ Vds	150pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120mA Ta
Gate Charge (Qg) (Max) @ Vgs	6.6nC @ 10V
Rise Time	14.4ns
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	110 ns
Turn-Off Delay Time	20 ns
Continuous Drain Current (ID)	120mA
Gate to Source Voltage (Vgs)	20V
DS Breakdown Voltage-Min	600V
Radiation Hardening	No
RoHS Status	RoHS Compliant