NTB30N06T4G

new-10%

Manufacturer part number:NTB30N06T4G

Manufacturer:ON Semiconductor

Description:MOSFET N-CH 60V 27A D2PAK

Case Package:SOT-23

Datasheet:NTB30N06T4G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2005
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
Terminal Finish	Tin (Sn)
HTS Code	8541.29.00.95
Subcategory	FET General Purpose Power
Voltage - Rated DC	60V
Technology	MOSFET (Metal Oxide)
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	260
Current Rating	27A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSSO-G2
Qualification Status	Not Qualified
Number of Elements	1
Power Dissipation-Max	88.2W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	88.2W
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	42m Ω @ 15A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1200pF @ 25V
Current - Continuous Drain (Id) @ 25°C	27A Ta
Gate Charge (Qg) (Max) @ Vgs	46nC @ 10V
Rise Time	36ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	31 ns
Turn-Off Delay Time	24 ns
Continuous Drain Current (ID)	27A
Gate to Source Voltage (Vgs)	20V
Drain-source On Resistance-Max	0.042Ohm
Drain to Source Breakdown Voltage	60V
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	101 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free