IRFHM8337TRPBF

new-10%

Manufacturer part number:IRFHM8337TRPBF

Manufacturer:Infineon Technologies

Description:MOSFET N-CH 30V 12A 8PQFN

Case Package:SOT-23

Datasheet:IRFHM8337TRPBF Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	17 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-PowerTDFN
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2013
Series	HEXFET®
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Resistance	9.4mOhm
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	FLAT
JESD-30 Code	S-PDSO-F5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Number of Channels	1
Power Dissipation-Max	2.8W Ta 25W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	9 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12.4m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	2.35V @ 25μA
Input Capacitance (Ciss) (Max) @ Vds	755pF @ 15V
Current - Continuous Drain (Id) @ 25°C	12A Ta
Gate Charge (Qg) (Max) @ Vgs	8.1nC @ 4.5V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	5.6 ns
Turn-Off Delay Time	9.9 ns
Continuous Drain Current (ID)	12A
Threshold Voltage	1.8V
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	35A
Drain to Source Breakdown Voltage	30V
Pulsed Drain Current-Max (IDM)	94A
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free