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IPU50R1K4CEBKMA1

IPU50R1K4CEBKMA1

IPU50R1K4CEBKMA1

Infineon Technologies

MOSFET N-CH 500V 3.1A TO-251

SOT-23

IPU50R1K4CEBKMA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-251-3 Short Leads, IPak, TO-251AA
Number of Pins 3
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series CoolMOS™
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) 3 (168 Hours)
ECCN Code EAR99
Subcategory FET General Purpose Powers
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 25W Tc
Element Configuration Single
Power Dissipation 25W
Turn On Delay Time 6.5 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 1.4 Ω @ 900mA, 13V
Vgs(th) (Max) @ Id 3.5V @ 70μA
Input Capacitance (Ciss) (Max) @ Vds 178pF @ 100V
Current - Continuous Drain (Id) @ 25°C 3.1A Tc
Gate Charge (Qg) (Max) @ Vgs 8.2nC @ 10V
Rise Time 6ns
Drain to Source Voltage (Vdss) 500V
Drive Voltage (Max Rds On,Min Rds On) 13V
Vgs (Max) ±20V
Fall Time (Typ) 30 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 3.1A
Gate to Source Voltage (Vgs) 30V
Height 6.22mm
Length 6.73mm
Width 2.41mm
RoHS Status RoHS Compliant

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