IXFK26N120P Overview

The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 16000pF @ 25V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 26A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=1.2kV. And this device has 1.2kV drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 76 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 60A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 56 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 30V.Operating this transistor requires a 1200V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

IXFK26N120P Features

a continuous drain current (ID) of 26A
a drain-to-source breakdown voltage of 1.2kV voltage
the turn-off delay time is 76 ns
based on its rated peak drain current 60A.
a 1200V drain to source voltage (Vdss)

IXFK26N120P Applications

There are a lot of IXYS
IXFK26N120P applications of single MOSFETs transistors.

• LCD/LED TV
• Consumer Appliances
• Lighting
• Uninterruptible Power Supply
• AC-DC Power Supply
• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Motor drives and Uninterruptible Power Supplies
• Micro Solar Inverter
• DC/DC converters
• Power Tools