TPC6011(TE85L,F,M)

new-10%

Manufacturer part number:TPC6011(TE85L,F,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 30V 6A VS6

Case Package:SOT-23

Datasheet:TPC6011(TE85L,F,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Number of Pins	6
Supplier Device Package	VS-6 (2.9x2.8)
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Series	U-MOSIV
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Power Dissipation-Max	700mW Ta
Power Dissipation	2.2W
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	20mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	640pF @ 10V
Current - Continuous Drain (Id) @ 25°C	6A Ta
Gate Charge (Qg) (Max) @ Vgs	14nC @ 10V
Rise Time	5.8ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Fall Time (Typ)	8 ns
Continuous Drain Current (ID)	6A
Gate to Source Voltage (Vgs)	20V
Input Capacitance	640pF
Rds On Max	20 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant