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SUM110P08-11-E3

SUM110P08-11-E3

SUM110P08-11-E3

Vishay Siliconix

MOSFET P-CH 80V 110A D2PAK

SOT-23

SUM110P08-11-E3 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package TO-263 (D2Pak)
Weight 1.437803g
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series TrenchFET®
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Number of Channels 1
Power Dissipation-Max 13.6W Ta 375W Tc
Element Configuration Single
Turn On Delay Time 25 ns
FET Type P-Channel
Rds On (Max) @ Id, Vgs 11.1mOhm @ 20A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 11500pF @ 40V
Current - Continuous Drain (Id) @ 25°C 110A Tc
Gate Charge (Qg) (Max) @ Vgs 280nC @ 10V
Rise Time 410ns
Drain to Source Voltage (Vdss) 80V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 470 ns
Turn-Off Delay Time 145 ns
Continuous Drain Current (ID) 110A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 11.5nF
Drain to Source Resistance 11.1mOhm
Rds On Max 11.1 mΩ
Height 4.83mm
Length 10.41mm
Width 9.65mm
RoHS Status ROHS3 Compliant

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