SIA453EDJ-T1-GE3

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Manufacturer part number:SIA453EDJ-T1-GE3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET P-CH 30V 24A 6-Pin PowerPAK SC-70 T/R

Case Package:SOT-23

Datasheet:SIA453EDJ-T1-GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	PowerPAK® SC-70-6
Transistor Element Material	SILICON
Operating Temperature	-50°C~150°C TJ
Packaging	Tape & Reel (TR)
Published	2014
Series	TrenchFET®
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Resistance	23.5mOhm
Terminal Finish	Matte Tin (Sn) - annealed
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	NO LEAD
Reach Compliance Code	not_compliant
JESD-30 Code	S-PDSO-N3
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	3.5W Ta 19W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
Turn On Delay Time	25 ns
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	18.5m Ω @ 5A, 10V
Vgs(th) (Max) @ Id	1.4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	1900pF @ 15V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	66nC @ 10V
Rise Time	45ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	2.5V 10V
Vgs (Max)	±12V
Fall Time (Typ)	28 ns
Turn-Off Delay Time	65 ns
Continuous Drain Current (ID)	24A
Gate to Source Voltage (Vgs)	12V
Drain to Source Breakdown Voltage	-30V
Pulsed Drain Current-Max (IDM)	80A
Avalanche Energy Rating (Eas)	5 mJ
Height	750μm
Length	2.05mm
Width	2.05mm
RoHS Status	ROHS3 Compliant