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TPC6503(TE85L,F,M)

  • TPC6503(TE85L,F,M)
  • TPC6503(TE85L,F,M)

TPC6503(TE85L,F,M)

TPC6503(TE85L,F,M)

Toshiba Semiconductor and Storage

Transistors Bipolar - BJT NPN hFE 400 to 1000 VCE 0.12V tF 45ns

SOT-23

TPC6503(TE85L,F,M) Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2007
Series U-MOSVII
Part Status Active
Power - Max 1.6W
Transistor Type NPN
DC Current Gain (hFE) (Min) @ Ic, Vce 400 @ 150mA 2V
Current - Collector Cutoff (Max) 100nA ICBO
Vce Saturation (Max) @ Ib, Ic 120mV @ 10mA, 500mA
Voltage - Collector Emitter Breakdown (Max) 30V
Current - Collector (Ic) (Max) 1.5A
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price

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