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TPC8036-H(TE12L,QM

TPC8036-H(TE12L,QM

TPC8036-H(TE12L,QM

Toshiba Semiconductor and Storage

MOSFET N-CH 30V 18A 8-SOIC

SOT-23

TPC8036-H(TE12L,QM Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SOIC (0.173, 4.40mm Width)
Number of Pins 8
Supplier Device Package 8-SOP (5.5x6.0)
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2008
Series U-MOSVI-H
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -55°C
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 1W Ta
FET Type N-Channel
Rds On (Max) @ Id, Vgs 4.5mOhm @ 9A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 4600pF @ 10V
Current - Continuous Drain (Id) @ 25°C 18A Ta
Gate Charge (Qg) (Max) @ Vgs 49nC @ 10V
Rise Time 4.5ns
Drain to Source Voltage (Vdss) 30V
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 7.4 ns
Continuous Drain Current (ID) 18A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 4.6nF
Rds On Max 4.5 mΩ
Radiation Hardening No
RoHS Status RoHS Compliant

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