TPC8111(TE12L,Q,M)

new-10%

Manufacturer part number:TPC8111(TE12L,Q,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET P-CH 30V 11A SOP8 2-6J1B

Case Package:SOT-23

Datasheet:TPC8111(TE12L,Q,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.173, 4.40mm Width)
Number of Pins	8
Transistor Element Material	SILICON
Operating Temperature	150°C TJ
Packaging	Tape & Reel (TR)
Published	2009
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	8
ECCN Code	EAR99
Technology	MOSFET (Metal Oxide)
Terminal Position	DUAL
Terminal Form	GULL WING
Pin Count	8
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	1W Ta
Operating Mode	ENHANCEMENT MODE
Power Dissipation	1.9W
FET Type	P-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	12m Ω @ 5.5A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	5710pF @ 10V
Current - Continuous Drain (Id) @ 25°C	11A Ta
Gate Charge (Qg) (Max) @ Vgs	107nC @ 10V
Rise Time	18ns
Drain to Source Voltage (Vdss)	30V
Drive Voltage (Max Rds On,Min Rds On)	4V 10V
Vgs (Max)	±20V
Fall Time (Typ)	109 ns
Continuous Drain Current (ID)	11A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-30V
Radiation Hardening	No
RoHS Status	RoHS Compliant