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TPCF8102(TE85L,F,M

TPCF8102(TE85L,F,M

TPCF8102(TE85L,F,M

Toshiba Semiconductor and Storage

MOSFET P-CH 20V 6A VS8 2-3U1A

SOT-23

TPCF8102(TE85L,F,M Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series U-MOSIII
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 700mW Ta
FET Type P-Channel
Rds On (Max) @ Id, Vgs 30m Ω @ 3A, 4.5V
Vgs(th) (Max) @ Id 1.2V @ 200μA
Input Capacitance (Ciss) (Max) @ Vds 1550pF @ 10V
Current - Continuous Drain (Id) @ 25°C 6A Ta
Gate Charge (Qg) (Max) @ Vgs 19nC @ 5V
Drain to Source Voltage (Vdss) 20V
Drive Voltage (Max Rds On,Min Rds On) 1.8V 4.5V
Vgs (Max) ±8V

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