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TPCP8003-H(TE85L,F

TPCP8003-H(TE85L,F

TPCP8003-H(TE85L,F

Toshiba Semiconductor and Storage

Trans MOSFET N-CH 100V 2.2A 8-Pin PS T/R

SOT-23

TPCP8003-H(TE85L,F Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-SMD, Flat Lead
Number of Pins 8
Operating Temperature 150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series U-MOSIII-H
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 840mW Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.68W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 180m Ω @ 1.1A, 10V
Vgs(th) (Max) @ Id 2.3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds 360pF @ 10V
Current - Continuous Drain (Id) @ 25°C 2.2A Ta
Gate Charge (Qg) (Max) @ Vgs 7.5nC @ 10V
Rise Time 7ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Continuous Drain Current (ID) 2.2A
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 100V
Height 800μm
Length 2.9mm
Width 2.4mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.446342 $0.446342
10 $0.421077 $4.21077
100 $0.397243 $39.7243
500 $0.374758 $187.379
1000 $0.353545 $353.545

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