TPH2R506PL,L1Q

new-10%

Manufacturer part number:TPH2R506PL,L1Q

Manufacturer:Toshiba Semiconductor and Storage

Description:X35 Pb-F Power Mosfet Transistor Sop8-Adv Pd=78W F=1Mhz Rohs Compliant: Yes

Case Package:SOT-23

Datasheet:TPH2R506PL,L1Q Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	8-PowerVDFN
Operating Temperature	175°C TJ
Packaging	Tape & Reel (TR)
Published	2016
Series	U-MOSIX-H
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	132W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4.4m Ω @ 30A, 4.5V
Vgs(th) (Max) @ Id	2.5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	5435pF @ 30V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	60nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
RoHS Status	RoHS Compliant