SQM120P06-07L_GE3

new-10%

Manufacturer part number:SQM120P06-07L_GE3

Manufacturer:Vishay Siliconix

Description:VISHAY - SQM120P06-07L_GE3 - Leistungs-MOSFET, p-Kanal, 60 V, 120 A, 0.0056 ohm, TO-263 (D2PAK), Oberflächenmontage

Case Package:SOT-23

Datasheet:SQM120P06-07L_GE3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	12 Weeks
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Supplier Device Package	TO-263 (D2Pak)
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Published	2015
Series	TrenchFET®
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	175°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Channels	1
Power Dissipation-Max	375W Tc
Power Dissipation	375W
Turn On Delay Time	15 ns
FET Type	P-Channel
Rds On (Max) @ Id, Vgs	6.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds	14280pF @ 25V
Current - Continuous Drain (Id) @ 25°C	120A Tc
Gate Charge (Qg) (Max) @ Vgs	270nC @ 10V
Drain to Source Voltage (Vdss)	60V
Drive Voltage (Max Rds On,Min Rds On)	4.5V 10V
Vgs (Max)	±20V
Turn-Off Delay Time	97 ns
Continuous Drain Current (ID)	-120A
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	-60V
Max Junction Temperature (Tj)	175°C
Drain to Source Resistance	5.6mOhm
Height	5.08mm
RoHS Status	ROHS3 Compliant