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2N2222AUBTX

2N2222AUBTX

2N2222AUBTX

TT Electronics/Optek Technology

2N2222AUBTX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from TT Electronics/Optek Technology stock available on our website

SOT-23

2N2222AUBTX Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 4-CLCC
Number of Pins 3
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 300mW
Power Dissipation 300mW
Transistor Type NPN
Collector Emitter Voltage (VCEO) 1V
Max Collector Current 800mA
DC Current Gain (hFE) (Min) @ Ic, Vce 75 @ 1mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Vce Saturation (Max) @ Ib, Ic 1V @ 15mA, 500mA
Collector Emitter Breakdown Voltage 50V
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 75V
Emitter Base Voltage (VEBO) 6V
Height 1.3716mm
Length 3.175mm
Width 2.667mm
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $19.85820 $1985.82
2N2222AUBTX Product Details

2N2222AUBTX Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 15mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 800mA volts.

2N2222AUBTX Features


the DC current gain for this device is 75 @ 1mA 10V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 15mA, 500mA
the emitter base voltage is kept at 6V

2N2222AUBTX Applications


There are a lot of TT Electronics/Optek Technology 2N2222AUBTX applications of single BJT transistors.

  • Driver
  • Interface
  • Inverter
  • Muting

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