2N2222AUBTX datasheet pdf and Transistors - Bipolar (BJT) - Single product details from TT Electronics/Optek Technology stock available on our website
SOT-23
2N2222AUBTX Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
4-CLCC
Number of Pins
3
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2013
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Max Power Dissipation
300mW
Power Dissipation
300mW
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
1V
Max Collector Current
800mA
DC Current Gain (hFE) (Min) @ Ic, Vce
75 @ 1mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Vce Saturation (Max) @ Ib, Ic
1V @ 15mA, 500mA
Collector Emitter Breakdown Voltage
50V
Collector Emitter Saturation Voltage
1V
Collector Base Voltage (VCBO)
75V
Emitter Base Voltage (VEBO)
6V
Height
1.3716mm
Length
3.175mm
Width
2.667mm
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
100
$19.85820
$1985.82
2N2222AUBTX Product Details
2N2222AUBTX Overview
As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 75 @ 1mA 10V.The collector emitter saturation voltage is 1V, which allows for maximum design flexibility.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 15mA, 500mA.Keeping the emitter base voltage at 6V allows for a high level of efficiency.Maximum collector currents can be below 800mA volts.
2N2222AUBTX Features
the DC current gain for this device is 75 @ 1mA 10V a collector emitter saturation voltage of 1V the vce saturation(Max) is 1V @ 15mA, 500mA the emitter base voltage is kept at 6V
2N2222AUBTX Applications
There are a lot of TT Electronics/Optek Technology 2N2222AUBTX applications of single BJT transistors.