VS-GT400TH120N

new-10%

Manufacturer part number:VS-GT400TH120N

Manufacturer:Vishay Semiconductor Diodes Division

Description:Trans IGBT Module N-CH 1.2KV 600A

Case Package:SOT-23

Datasheet:VS-GT400TH120N Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount
Mounting Type	Chassis Mount
Package / Case	Double INT-A-PAK (3 + 8)
Operating Temperature	150°C TJ
Published	2015
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
ECCN Code	EAR99
Terminal Finish	NICKEL (197)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	2.119kW
Number of Elements	1
Configuration	Half Bridge
Power - Max	2119W
Input	Standard
Collector Emitter Voltage (VCEO)	2.15V
Max Collector Current	600A
Current - Collector Cutoff (Max)	5mA
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Input Capacitance	28.8nF
Vce(on) (Max) @ Vge, Ic	2.15V @ 15V, 400A
IGBT Type	Trench
NTC Thermistor	No
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	28.8nF @ 25V
RoHS Status	ROHS3 Compliant