2N6661-E3

new-10%

Manufacturer part number:2N6661-E3

Manufacturer:Vishay Siliconix

Description:Trans MOSFET N-CH 90V 0.86A 3-Pin TO-205AD

Case Package:SOT-23

Datasheet:2N6661-E3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Number of Pins	3
Supplier Device Package	TO-39
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2014
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Number of Elements	1
Number of Channels	1
Power Dissipation-Max	725mW Ta 6.25W Tc
Element Configuration	Single
Power Dissipation	725mW
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	2V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	50pF @ 25V
Current - Continuous Drain (Id) @ 25°C	860mA Tc
Drain to Source Voltage (Vdss)	90V
Drive Voltage (Max Rds On,Min Rds On)	5V 10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	860mA
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	90V
Input Capacitance	50pF
Drain to Source Resistance	4Ohm
Rds On Max	4 Ω
Height	6.6mm
Length	9.4mm
Width	8.15mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free